|
Detector Type
|
Si/PIN
|
InGaAs/PIN
|
InGaAs/PIN
|
Si/PIN
|
InGaAs/PIN
|
|
Wavelength Range
|
320-1000 nm
|
800-1700 nm
|
800-1700 nm
|
320-1000 nm
|
800-1700 nm
|
|
Typical Max. Responsivity
|
0.53 A/W
|
1.0 A/W
|
1.0 A/W
|
0.53 A/W
|
1.0 A/W
|
|
Active Detector Diameter
|
0.8 mm
|
0.3 mm
|
0.3 mm
|
0.8 mm
|
0.3 mm
|
|
Bandwidth (3dB)
|
DC-75 MHz
|
DC-15 MHz
|
|
Common Mode Rejection Ratio
|
>35 dB
|
|
Transimpedance Gain *
|
180 x 103 V/A
|
560 x 103 V/A
|
51 x 103 V/A
|
|
Conversion Gain RF-Output
|
95 x 103 V/W
|
180 x 103 V/W
|
560 x 103 V/W
|
27 x 103 V/W
|
51 x 103 V/W
|
|
Conversion Gain Monitor Outputs
|
10 V/mW @
820nm
|
10 V/mW @
1550 nm
|
100 V/mW @
1550 nm
|
10 V/mW @
820 nm
|
10 V/mW @
1550 nm
|
|
CW Saturation Power
|
38 µW @
820 nm
|
20 µW @
1300 nm
|
6.5 µW @
1550 nm
|
130 µW @
820 nm
|
70 µW @
1550 nm
|
|
NEP (DC-10MHz)
|
6.5 pW/Sqrt(Hz)
|
3.3 pW/Sqrt(Hz)
|
3.2 pW/Sqrt(Hz)
|
5.7 pW/Sqrt(Hz)
|
3.2 pW/Sqrt(Hz)
|
|
Optical Inputs
|
FC/PC or FC/APC (Removable)
|
|
Photodiode Damage Threshold
|
20 mW
|
|
Electrical Outputs
|
SMA
|
|
RF-Output Impedance
|
50 ohms
|
|
DC-offset RF Output
|
< ±2 mV, AC-Coupling upon Request
|
|
Size
|
85 x 80 x 30 mm
|
|
Power Supply
|
±12 V @ 200 mA
|
