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联系方式：
TEL: 0755-66802236
FAX：0755－22647385
QQ: 2844098291
E-mail: info@hgdtec.com
地址：深圳市南山区桃园路西海明珠大厦F座11楼
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O波段助推光学放大器
主要特点
l 保偏：只能放大一种偏振态
l 提供PM或SM光纤尾纤（1.5米），在每块芯片末端的耦合损耗为2.5dB
l FC/APC接头
l 高饱和功率（+16dBm），高效率
l 端面镀增透膜（R< 0.1%）
典型应用
助推激光发射器，补偿传送MUX/DeMUX的插入损耗，光学快门
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Item #
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Center Wavelength
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3 dB Bandwidth
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Saturation Output
Power (@ -3 dB)
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Small Signal Gain
(@ Pin = -20 dBm)
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Noise Figure
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BOA1130S and BOA1130P
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1285 nm (Typical)
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87 nm (Typical)
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17 dBm (Typical)
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30 dB (Typical)
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7.0 dB (Typical)
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BOA1132SXL*
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1300 nm (Typical)
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90 nm (Min)
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17 dBm (Min)
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30 dB (Min)
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7.0 dB (Max)
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BOA1132S and BOA1132P
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1300 nm (Typical)
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87 nm (Typical)
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17 dBm (Typica)l
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30 dB (Typical)
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7.0 dB (Typical)
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BOA1017S and BOA1017P
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1310 nm (Typical)
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70 nm (Typical)
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15 dBm (Typical)
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23 dB (Typical)
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7.0 dB (Typical)
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* 在基本的产品编号相同的情况下，产品编号以XL结尾的组件的性能优于非XL结尾的组件。
更多规格请查看规格和性能曲线标签
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助推光学放大器（BOA）是单程行波放大器，对单色和多波长信号的性能都很好。由于BOA只放大一种偏振态，它们最适合已知输入光的偏振态的应用。如果输入光的偏振态未知或者有波动，那么需要用一个半导体光学放大器（SOA）。但BOA的增益、噪声、频宽和饱和功率规格优于SOA，这是由于设计的特点使得SOA对偏振不敏感。
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BOA由高效的InP/InGaAsP多量子阱（MQW）层结构组成。如右图所示，放大器的输入和输出是和光学放大器芯片上可靠的脊形波导相耦合的。通常，光纤-芯片和芯片-光纤的耦合（每个）损耗范围是1.5至2.5dB。耦合损耗影响总增益、噪声指数（NF）和饱和功率（Psat）。虽然放大器产生的增益大于损耗，这些损耗仍然是决定设备性能的重要因素。例如，输入耦合效率下降1dB，噪声指数则上升1dB。同样的，输出耦合下降1dB，则饱和功率也下降1dB。
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技术参数
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Item #
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BOA1130S and
BOA1130P
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Min
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Typical
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Max
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Operating Current
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IOP
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-
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700 mA
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750 mA
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Center Wavelength
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λC
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1265 nm
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1285 nm
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1295 nm
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Optical 3 dB Bandwidth
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BW
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80 nm
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87 nm
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-
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Saturation Output Power
(@ -3 dB)
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PSAT
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15 dBm
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17 dBm
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-
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Small Signal Gain
(@ Pin = -20 dBm, λ = 1312 nm)
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G
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27 dB
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30 dB
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-
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Gain Ripple (RMS) @ IOP
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δG
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-
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0.2 dB
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0.3 dB
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Noise Figure
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NF
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-
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7.0
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9.0
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Forward Voltage
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VF
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-
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1.6 V
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2.0 V
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Chip Length
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-
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-
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1.5 mm
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-
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Waveguide Refractive Index
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-
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-
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3.2
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-
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TEC Operation (Typ./Max @ TCASE = 25/70 °C)
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- TEC Current
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ITEC
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-
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0.4 A
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1.5 A
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- TEC Voltage
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VTEC
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-
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0.5 V
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4.0 V
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- Thermistor Resistance
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RTH
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-
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10 kΩ
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-
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Item #
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BOA1132S and
BOA1132P
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BOA1132SXL
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Min
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Typical
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Max
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Min
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Typical
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Max
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Operating Current
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IOP
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-
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700 mA
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750 mA
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-
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700 mA
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750 mA
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Center Wavelength
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λC
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1290 nm
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1300 nm
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1315 nm
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1290 nm
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1300 nm
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1315 nm
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Optical 3 dB Bandwidth
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BW
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80 nm
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87 nm
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-
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90 nm
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-
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-
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Saturation Output Power
(@ -3 dB)
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PSAT
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15 dBm
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17 dBm
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-
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17 dBm
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18 dBm
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-
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Small Signal Gain
(@ Pin = -20 dBm, λ = 1312 nm)
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G
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27 dB
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30 dB
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-
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30 dB
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-
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-
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Gain Ripple (RMS) @ IOP
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δG
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-
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0.2 dB
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0.3 dB
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-
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0.1 dB
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0.2 dB
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Noise Figure
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NF
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-
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7.0
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9.0
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-
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6.0
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7.0
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Forward Voltage
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VF
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-
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1.6 V
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2.0 V
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-
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1.6 V
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2.0 V
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Chip Length
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-
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1.5 mm
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-
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1.5 mm
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-
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Waveguide Refractive Index
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-
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3.2
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-
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3.2
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-
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TEC Operation (Typ./Max @ TCASE = 25/70 °C)
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- TEC Current
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ITEC
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-
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0.4 A
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1.5 A
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-
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0.4 A
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1.5 A
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- TEC Voltage
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VTEC
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-
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0.5 V
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4.0 V
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-
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0.5 V
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4.0 V
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- Thermistor Resistance
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RTH
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-
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10 kΩ
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-
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10 kΩ
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-
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Item #
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BOA1017S and
BOA1017P
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Min
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Typical
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Max
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Operating Current
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IOP
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-
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600 mA
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750 mA
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Center Wavelength
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λC
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1290 nm
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1310 nm
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1330 nm
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Optical 3 dB Bandwidth
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BW
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60 nm
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70 nm
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-
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Saturation Output Power
(@ -3 dB)
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PSAT
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13 dBm
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15 dBm
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-
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Small Signal Gain Across BW
(@ Pin = -20 dBm)
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G
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17 dB
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23 dB
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-
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Gain Ripple (p-p) @ IOP
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δG
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-
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0.1 dB
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0.25 dB
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Polarization Extinction Ratio
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PER
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-
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16 dB
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-
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Noise Figure
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NF
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-
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7.0
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9.0
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Forward Voltage
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VF
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-
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1.4 V
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1.6 V
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Chip Length
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-
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-
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1.5 mm
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-
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Waveguide Refractive Index
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-
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-
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3.2
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-
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TEC Operation (Typ./Max @ TCASE = 25/70 °C)
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- TEC Current
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ITEC
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-
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0.15 A
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1.5 A
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- TEC Voltage
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VTEC
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-
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0.35 V
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4.0 V
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- Thermistor Resistance
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RTH
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-
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10 kΩ
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-
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