C带光学放大器
主要特点
l 半导体光学放大器（SOA）
n 偏振无关：可放大所有偏振态
n 带FC/APC接头的单模或保偏光纤尾纤（1.5米）
n 典型应用：嵌入式放大器、探测器预放、快速光学开关（~1纳秒的开关速度）
l 助推光学放大器（BOA）
n 保偏：只放大一种偏振态
n 带FC/APC接头的单模或保偏光纤尾纤（1.5米）
典型应用
助推激光发射器、补偿传送MUX/DeMUX插入损耗、光学快门
|
Item #
|
Center Wavelength
|
3 dB Bandwidth
|
SaturatedOutput
Power (@ -3 dB)
|
Small Signal Gain
(@ Pin = -20 dBm)
|
Noise Figure
|
|
BOA1004S and BOA1004P
|
1550 nm Typical
|
85 nm Typical
|
15 dBm Typical
|
27 dB Typical
|
7.5 dB Typical
|
|
SOA1013S
|
1500 nm Typical
|
-
|
14 dBm Typical
|
13 dB Typical
|
8.0 dB Typical
|
|
SOA1117S and SOA1117P
|
1550 nm Typical
|
-
|
9 dBm Typical
|
20 dB Typical
|
9.0 dB Typical
|
|
BOA1007C and BOA1007H
|
1550 nm Typical
|
85 nm Typical
|
18 dBm Typical
|
30 dB Typical
|
6.0 dB Typical
|
BOA和SOA是单程行波放大器，对单色和多波长信号的性能都很好。由于BOA只放大一种偏振态，它们最适合已知输入光的偏振态的应用。如果输入光的偏振态未知或者有波动，那么需要用一个半导体光学放大器（SOA）。但BOA的增益、噪声、频宽和饱和功率规格优于SOA，这是由于设计的特点使得SOA对偏振不敏感。
提供自由空间型和光纤耦合型的BOA和SOA。自由空间型的放大器是以submount上芯片（C）或者散热片上芯片（H）提供的。光纤耦合光学放大器具有低耦合损耗。光纤到芯片和芯片到光纤耦合（每个）的损耗一般在1.5到2.5dB之间。这会影响总增益、噪声系数（NF）和饱和功率（Psat）。尽管放大器产生的增益将大于这些耦合损耗，这些耦合损耗仍然是决定器件性能的重要因素。例如，输入耦合效率下降1dB，噪声指数则上升1dB。同样的，输出耦合下降1dB，则饱和功率也下降1dB。
技术参数
|
Item #
|
|
BOA1004S and BOA1004P
|
|
Min
|
Typ
|
Max
|
|
Operating Current
|
IOP
|
-
|
600 mA
|
750 mA
|
|
Center Wavelength
|
λC
|
1530 nm
|
1550 nm
|
1570 nm
|
|
ASE Optical 3 dB Bandwidth
|
BW
|
80 nm
|
85 nm
|
-
|
|
Saturation Output Power
(@ -3 dB)
|
PSAT
|
13 dBm
|
15 dBm
|
-
|
|
Small Signal Gain
(@ Pin = -20 dBm λ = 1550 nm)
|
G
|
23 dB
|
27 dBm
|
-
|
|
Gain Ripple (RMS) @ IOP
|
δG
|
-
|
0.05 dB
|
0.2 dB
|
|
Noise Figure
|
NF
|
-
|
7.5 dB
|
9 dB
|
|
Forward Voltage
|
VF
|
-
|
1.3 V
|
1.6 V
|
|
Chip Length
|
-
|
-
|
1.5 mm
|
-
|
|
Waveguide Refractive Index
|
-
|
-
|
3.2
|
-
|
|
TEC Operation (typ/max @ TCASE = 25/70 °C)
|
|
- TEC Current
|
ITEC
|
-
|
0.13 A
|
1.5 A
|
|
- TEC Voltage
|
VTEC
|
-
|
0.28 V
|
4.0 V
|
|
- Thermistor Resistance
|
RTH
|
-
|
10 kΩ
|
-
|
|
Item #
|
|
SOA1013S
|
SOA1117S and SOA1117P
|
|
Min
|
Typ
|
Max
|
Min
|
Typ
|
Max
|
|
Operating Current
|
IOP
|
-
|
500 mA
|
750 mA
|
-
|
500 mA
|
600 mA
|
|
Operating Wavelength Range
|
|
1528 nm
|
-
|
1562 nm
|
1528 nm
|
-
|
1562 nm
|
|
Center Wavelength
|
λC
|
-
|
1500 nm
|
-
|
-
|
1550 nm
|
-
|
|
Saturation Output Power @ -3 dB
|
PSAT
|
12 dBm
|
14 dBm
|
-
|
6 dBm*
|
9 dBm*
|
-
|
|
Small Signal Gain
(Over C-Band @ Pin = -20 dBm)
|
G
|
10 dB
|
13 dB
|
-
|
15 dB
|
20 dB
|
-
|
|
Gain Flatness
(Over C-Band @ Pin = -20 dBm)
|
ΔG
|
-
|
5 dB
|
7 dB
|
-
|
-
|
-
|
|
Gain Ripple (p-p) @ IOP, λC
|
δG
|
-
|
0.1 dB
|
0.5 dB
|
-
|
0.2 dB
|
0.5 dB
|
|
Polarization Dependent Gain
|
PDG
|
-
|
1.0 dB
|
1.5 dB
|
-
|
1 dB
|
2.5 dB
|
|
Noise Figure
|
NF
|
-
|
8 dB
|
9.5 dB
|
-
|
9 dB
|
11 dB
|
|
Forward Voltage
|
VF
|
-
|
1.6 V
|
1.8 V
|
-
|
1.4 V
|
2.0 V
|
|
Chip Length
|
-
|
-
|
1.5 mm
|
-
|
-
|
1.0 mm
|
-
|
|
Waveguide Refractive Index
|
-
|
-
|
3.2
|
-
|
-
|
3.2
|
-
|
|
TEC Operation (typ/max @ TCASE = 25/70 °C)
|
|
- TEC Current
|
ITEC
|
-
|
0.23 A
|
1.5 A
|
-
|
0.2 A
|
1.5 A
|
|
- TEC Voltage
|
VTEC
|
-
|
0.5 V
|
4.0 V
|
-
|
0.4 V
|
4.0 V
|
|
- Thermistor Resistance
|
RTH
|
-
|
10 kΩ
|
-
|
-
|
10 kΩ
|
-
|
|
Item #
|
|
BOA1007C and BOA1007H
|
|
Min
|
Typ
|
Max
|
|
Operating Current
|
IOP
|
-
|
600 mA
|
750 mA
|
|
Central Wavelength
|
λC
|
1530 nm
|
1550 nm
|
1570 nm
|
|
Optical 3 dB Bandwidth
|
BW
|
80 nm
|
85 nm
|
-
|
|
Saturation Output Power
(@ -3 dB)
|
PSAT
|
15 dBm
|
18 dBm
|
-
|
|
Small Signal Gain
(@ Pin = -20 dBm, λ = 1550 nm)
|
G
|
26 dB
|
30 dB
|
-
|
|
Gain Ripple (RMS) @ IOP
|
δG
|
-
|
0.05 dB
|
0.2 dB
|
|
Polarization Extinction Ratio
|
PER
|
-
|
18 dB
|
-
|
|
Chip Noise Figure
|
NF
|
-
|
6.0 dB
|
8.0 dB
|
|
Forward Voltage
|
VF
|
-
|
1.3 V
|
1.6 V
|
|
Chip Length
|
L
|
-
|
1.5 mm
|
-
|
|
Waveguide Refractive Index
|
|
-
|
3.2
|
-
|
|
Lateral Beam Exit Angle
|
ΘEXT
|
-
|
19.5°
|
-
|
|
Beam Divergence Angle (FWHM)
|
|
- Transverse
|
ΘT
|
26°
|
34°
|
42°
|
|
- Lateral
|
ΘL
|
10°
|
14°
|
30°
|
